In this episode of PowerUP, we speak with Professor Joseph Bernstein from Ariel University, a pioneer in power electronics with a deep background from MIT and extensive experience in GaN and SiC ...

Invented in the 19th century, batteries proved to be an extraordinary innovation and completely changed the way we use energy, paving the way for portability and therefore for the spread of portable ...

Practical applications Its practical applications are mainly in switching and power control of AC systems, as the Triac can be switched “ON” by a positive or negative Gate pulse, regardless of the ...

HelenAnn Brown, technical marketing manager at Apex Microtechnology, discussed the company’s use of wide-bandgap materials like silicon carbide and gallium nitride to drive performance and ...

At PCIM in Nuremberg, Germany, I sat down with Gerald Deboy, fellow at Infineon Technologies, to discuss the evolving power needs of next-generation AI data centers. As AI drives exponential increases ...

Maurizio Di Paolo Emilio is editor-in-chief of Power Electronics News and embedded.com, as well as an EE Times correspondent. He holds a Ph. D. in Physics and is a Telecommunications Engineer. He has ...

The WBG market in power applications SiC and GaN growth by segment According to Yole Group, the power global market is estimated to grow from $23 billion in 2023 to $56 million in 2029. As shown by ...

APEC 2025 boasted six main program pillars: plenary sessions, technical and industry sessions, an exposition with more than 300 exhibitors, professional education seminars, and a debate session.

Wide-bandgap semiconductors—specifically gallium nitride and silicon carbide—are revolutionizing power electronics, enabling higher efficiency, smaller form factors, and greater performance in ...

Now, Future Electronics’ power system design laboratory, based in London, has implemented a SiC-MOSFET-based design for a 3-kW LLC power supply, which steps a nominal 390-VDC input down to a 49-VDC ...

Under U.S. pressure, ASML has been prohibited from selling its advanced equipment to China since 2019. Recently, the Netherlands further tightened these restrictions, effectively blocking China’s ...

It’s not mentioned in the datasheet, but my suggestion is to use a 10R resistor between the gate of the MOSFET and the driver chip, mainly for radiated emission concerns, especially if you plan to use ...