The storage element in NAND flash memory is the floating gate MOSFET transistor. These devices are similar to a standard MOSFET device, other than there is an addition isolated gate. When a NAND flash ...
An ultrathin ferroelectric capacitor demonstrates strong electric polarization despite being just 30 nm thick including top ...
An ultrathin ferroelectric capacitor, designed by researchers from Japan, demonstrates strong electric polarization despite ...
If you’ve noticed that your next smartphone, laptop, or PC upgrade suddenly costs noticeably more than it did a year ago, you ...
A quantum version of a random access memory can read and write information 1000 times, and could eventually become a key component in long-distance quantum networks. In conventional computers, random ...
Figure 1. Illustrations of the ultra-low power phase change memory device developed through this study and the comparison of power consumption by the newly developed phase change memory device ...
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