Efficient Power Conversion Corp. (EPC) has expanded its enhancement-mode gallium nitride (eGaN) FET family with the introduction of the 100-V, 2.2 mΩ EPC2071 GaN FET. The EPC2071 offers lower gate ...
A newly introduced high-voltage MOSFET platform promises to boost efficiency and power density across a range of data center, ...
The 800 V automotive systems enable higher performance electric vehicles capable of driving ranges longer than 400 miles on a single charge and charging times as fast as 20 minutes. 800 V batteries ...
Distributed power systems are prevalent in telecommunications, networking, and high-end server applications and utilize a 48 V bus voltage adopted from the telecom industry. From the 48 V bus, a ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will launch a 50W silicon radio-frequency (RF) high-power metal-oxide semiconductor field-effect ...
EL SEGUNDO, Calif.--(BUSINESS WIRE)--Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN ®) power FETs and ICs, expands the selection of low voltage, ...
Gallium-nitride (GaN) FETs are becoming widely preferred in many products, from low power, low-cost applications such as smart device chargers all the way up to high power automotive applications.
The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power ...
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