The leading-edge foundry business is challenging. For starters, foundry vendors require vast resources, gigantic fabs and lots of know-how. And yet, it’s still difficult to make money in this business ...
Stating that not all FinFETs are created equal, Samsung Electronics Co., Ltd., a global leader in advanced semiconductor solutions, today announced that the IP and design enablement ecosystem for its ...
FinFET devices were developed to address the need for improved gate control to suppress leakage current (IOFF); DIBL (drain-induced barrier lowering); and process‐induced variability below ...
Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers to create ...
(Nanowerk News) Takashi Matsukawa and Meishoku Masahara and others, Silicon Nano-Device Group, the Nanoelectronics Research Institute of the National Institute of Advanced Industrial Science and ...
The double-gate (DG) FET provides a fundamental advantage over conventional single-gate (SG) FETs. In short-channel FETs the drain potential competes with that of the gate to influence the channel.
Steven Musil is a senior news editor at CNET News. He's been hooked on tech since learning BASIC in the late '70s. When not cleaning up after his daughter and son, Steven can be found pedaling around ...
Covina, April 13, 2023 (GLOBE NEWSWIRE) -- FinFET is Fin Field-effect Transistor with new complementary metal oxide semiconductor transistor based on similarity between shape of fin and transistor.
As the major portion of the industry adopts FinFETs as the workhorse transistor for 16nm and 14nm, researchers worldwide are looking into the limits of FinFETs and potential device solutions for the ...
sureCore, the low power embedded SRAM IP specialist, has announced the availability of its PowerMiser, ultra-low, dynamic power memory compiler in 16nm. This will enable developers to more easily hit ...
Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers to create ...
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